vishay semiconductors tlmb310. document number 83034 rev. 1.8, 18-sep-07 www.vishay.com 1 standard smd led plcc-2 features ? gan on sic technology ? eia and ice standard package ? compatible with infrared, vapor phase and wave solder processes according to cecc ? available in 8 mm tape ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? luminous intensity ratio in one packaging unit i vmax /i vmin 1.6 ? esd class 1 ? lead (pb)-free device 19225 e3 description this device has been redesigned in 1998 replacing sic by gan technology to meet the increasing demand for high efficiency blue leds. the package of the tlmb310. is the plcc-2 (equivalent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. all leds are categorized in luminous intensity groups. that allows users to assemble leds with uniform appearance. product group and package data ? product group: led ? package: smd plcc-2 ? product series: standard ? angle of half intensity: 60 applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight in office equipment ? flat backlight for lcds , switches and symbols ? general use parts table part color, luminous intensity technology tlmb3100 blue, i v > 4.0 mcd gan on sic tlmb3101 blue, i v = (4.0 to 12.5) mcd gan on sic TLMB3104 blue, i v = (5.0 to 12.5) mcd gan on sic tlmb3106 blue, i v = (5.0 to 20.0) mcd gan on sic
www.vishay.com 2 document number 83034 rev. 1.8, 18-sep-07 vishay semiconductors tlmb310. note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 typical characteristics t amb = 25 c, unless otherwise specified absolute maximum ratings 1) tlmb310. parameter test condition symbol value unit reverse voltage v r 5v dc forward current t amb 60 c i f 20 ma surge forward current t p 10 s i fsm 0.1 a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics 1) tlmb310., blue parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma tlmb3100 i v 4.0 8.0 mcd tlmb3101 i v 4.0 12.5 mcd TLMB3104 i v 5.0 12.5 mcd tlmb3106 i v 5.0 20.0 mcd dominant wavelength i f = 10 ma d 466 nm peak wavelength i f = 10 ma p 428 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 3.9 4.5 v reverse voltage i r = 10 a v r 5v figure 1. power dissipation vs. ambient temperature 100 8 0 60 40 0 25 50 75 100 125 p- po w er dissipation (m w ) v t am b - am b ient temperat u re (c) 95 10904 20 0 figure 2. forward current vs. ambient temperature for ingan 0 10 20 30 40 60 i- for w ard c u rrent (ma) f 15 88 4 50 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0
document number 83034 rev. 1.8, 18-sep-07 www.vishay.com 3 vishay semiconductors tlmb310. figure 3. rel. luminous intensity vs. angular displacement figure 4. forward current vs. forward voltage figure 5. rel. luminous flux vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 1 10 100 v f - for w ard v oltage ( v ) 15 8 46 i f - for w ard c u rrent (ma) 0246 8 13 57 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 15 8 47 i v rel - relati v e l u mino u s intensity i f = 10 ma t am b - am b ient temperat u re (c) - 10 10 20 30 40 50 60 70 8 090100 0 figure 6. relative luminous flux vs. forward current figure 7. relative luminous intensity vs. wavelength figure 8. forward current vs. pulse length 0.01 0.1 1 10 100 i f - for w ard c u rrent (ma) 15 8 4 8 i v rel - relati v e l u mino u s intensity 110 0 20 40 60 8 0 100 120 350 400 450 500 550 600 - w a v elenght (nm) 15 8 49 i v rel - relati v e l u mino u s intensity (%) i f = 10 ma 10 100 1000 0.01 0.1 1 10 100 t p -p u lse length (ms) 1 88 16 i - for w ard c u rrent (ma) fm t p /t=1 0.02 0.05 0.1 0.2 0.5 0.01
www.vishay.com 4 document number 83034 rev. 1.8, 18-sep-07 vishay semiconductors tlmb310. package dimensions in millimeters 95 11314-1 mounting pad layout 3.5 0.2 0.9 1.75 0.10 pin identification 2. 8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5025.01-4 iss u e: 8 ; 22.11.05 ca
document number 83034 rev. 1.8, 18-sep-07 www.vishay.com 5 vishay semiconductors tlmb310. ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into t he atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semico nductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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